Excellent quality Gate Turn-Off Thyristor For Hvdc - Phase Control Thyristor – Runau Electronics

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Excellent quality Gate Turn-Off Thyristor For Hvdc - Phase Control Thyristor – Runau Electronics Detail:

Phase Control Thyristor (Alloying Type)

Description:

Thyristor, also known as Silicon Control Rectifier (SCR), is a high-power semiconductor device consisting of three PN structures. In terms of performance, the thyristor not only has unidirectional conductivity, but also has more valuable controllability than the silicon rectifier element, which only two states of conduction and off-state, to control large power with small power, power amplification up to hundreds or thousands of times. The reaction is very fast, turning on and off in micro-seconds. Non-contact operation, no sparks, no noise, while high efficiency and low cost. Therefore, especially in high power supply system, thyristor has been widely used in rectifier circuit, static bypass switch, contact-free output switch and other circuits.

The thyristor manufacturing standard and processing technology of RUNAU Electronics was introduced from USA since 1980s, as a pioneer of manufacturing thyristor in China, the technical team of RUNAU had acquired the cutting-edge knowledge and ample manufacturing experience for more than 30 years. On basic of traditional manufacturing process, the talent technicians of RUNAU Electronics had developed the art-of-state technology in manufacturing thyristor with advantage features of European products, the quality and performance are improved greatly, more big wins achieved in the application of power electronics fields, and more value was created for partners.

Introduction:

1. Chip

The thyristor chip manufactured by RUNAU Electronics is sintered alloying technology employed. The silicon and molybdenum wafer was sintered for alloying by pure aluminum (99.999%) under high vacuum and high temperature environment. The administration of sintering characteristics is the key factor to affect the quality of thyristor. The know-how of RUNAU Electronics in addition to manage the alloy junction depth, surface flatness, alloy cavity as well full diffusion skill, center gate, ring circle pattern were applied to enable the reliable and high efficient conduction operation of thyristor, in order to ensure the high quality performance.

2. Encapsulation

By strict controlling of flatness and parallelism of molybdenum wafer and external package, the chip and molybdenum wafer will be integrated with external package tightly and completely. Such will optimize the resistance of surge current and high short circuit current. And the measurement of electron evaporation technology was employed to create a thick aluminum film on silicon wafer surface, and ruthenium layer plated on molybdenum surface will enhance thermal fatigue resistance greatly, the work life time of thyristor will be increased significantly.

Technical specification

  1. Phase controlled thyristor with alloy type chip manufactured by RUNAU Electronics, range of ITAV from 300A to 6000A and VDRM/VRRM from 800V to 4400V.
  2. IGT, VGT and IH are the test values at 25℃, unless otherwise stated, all the other parameters are the test values under Tjm;
  3. I2t=I2F SM×tw/2, tw= Sinusoidal half wave current base width. At 50Hz, I2t=0.005I2FSM(A2S);
  4. At 60Hz: IFSM(8.3ms)=IFSM(10ms)×1.066,Tj=Tj; I2t(8.3ms)=I2t(10ms)×0.943,Tj=Tjm

Parameter:

TYPE

IT(AV)

A

TC

VDRRM/VRRM

V

ITSM @TVJIM &10ms

A

I2t

A2s

VTM

@IT&TJ=25

V/A

Tjm

Rjc

/W

Rc-s

/W

F

KN

m

Kg

CODE

Voltage Up to 1800V

KP320-**

320

70

1200~1800

3840

7.4×104

1.60

600

125

0.08

0.02

4

0.060

T1A

KP400-**

400

70

1200~1800

4800

1.1×105

1.60

1200

125

0.045

0.01

13

0.200

T3C

KP600-**

600

65

1200~1800

7200

2.6×105

1.65

1500

125

0.04

0.008

15

0.260

T5C

KP800-**

800

70

1200~1800

9600

4.6×105

1.60

1500

125

0.039

0.008

15

0.260

T5C

KP1000-**

1000

70

1200~1800

12000

7.2×105

1.45

1500

125

0.03

0.006

20

0.330

T7C

KP1200-**

1200

70

1200~1800

14400

10.0×105

1.60

3000

125

0.022

0.005

25

0.460

T8C

KP1500-**

1500

70

1200~1800

18000

1.6×106

1.55

3000

125

0.018

0.005

27

0.593

T9C

KP1800-**

1800

70

1200~1800

21600

2.3×106

1.50

3000

125

0.015

0.0045

30

0.720

T10C

KP2500-**

2500

70

1200~1800

30000

4.5×106

1.45

3000

125

0.0125

0.004

33

0.850

T11C

KP3000-**

3000

70

1200~1800

36000

6.5×106

1.40

3000

125

0.01

0.003

35

1.100

T13C

KP4000-**

4000

65

1200~1800

48000

11.5×106

1.35

3000

125

0.008

0.002

60

1.400

T15C

KP6000-**

6000

65

1200~1800

72000

26.0×106

1.30

5000

125

0.006

0.0015

80

1.900

T16C

Voltage Up to 2400V

KP500-**

500

70

2000~2400

7000

2.5×105

1.80

1500

125

0.039

0.008

15

0.260

T5C

KP800-**

800

70

2000~2400

11200

6.3×105

1.80

2400

125

0.03

0.006

20

0.330

T7C

KP1000-**

1000

70

2000~2400

14000

7.2×105

1.80

3000

125

0.022

0.005

25

0.460

T8C

KP1200-**

1200

70

2000~2400

14400

10.0×105

1.80

3000

125

0.02

0.005

27

0.500

T8C

KP1500-**

1500

70

2000~2400

18000

1.6×106

1.70

3000

125

0.015

0.0045

30

0.720

T10C

KP2100-**

2100

70

2000~2400

24000

2.9×106

1.60

3000

125

0.0125

0.004

33

0.850

T11C

KP3000-**

3000

65

2000~2400

36000

6.5×106

1.45

3000

125

0.01

0.003

35

1.100

T13C

KP5700-**

5700

65

2000~2400

68400

23.0×106

1.30

5000

125

0.006

0.0015

80

1.900

T16C

Voltage Up to 3200V

KP500-**

500

70

2600~3200

7000

2.5×105

2.15

1500

125

0.039

0.008

15

0.260

T5C

KP1000-**

1000

70

2600~3200

12000

7.2×105

2.10

2500

125

0.022

0.005

25

0.460

T8C

KP1200-**

1200

70

2600~3200

14400

1.0×106

2.00

3000

125

0.018

0.005

27

0.593

T9C

KP1700-**

1700

70

2600~3200

20400

2.1×106

1.95

3000

125

0.015

0.0045

30

0.720

T10C

KP2000-**

2000

70

2600~3200

24000

2.9×106

1.85

3000

125

0.0125

0.004

33

0.850

T11C

KP2500-**

2500

70

2600~3200

25200

3.2×106

1.75

3000

125

0.011

0.003

35

1.500

T13D

KP3700-**

3700

65

2600~3200

44400

9.9×106

1.65

3000

125

0.008

0.002

60

1.990

T15D

KP4500-**

4500

65

2600~3200

54000

1.5×107

1.65

5000

125

0.006

0.0015

80

1.900

T16C

Voltage Up to 4200V

KP480-**

480

70

3600~4200

5760

1.7×105

2.40

1200

125

0.039

0.008

15

0.260

T5C

KP1000-**

1000

70

3600~4200

12000

7.2×105

2.45

2500

125

0.022

0.005

25

0.460

T8C

KP1200-**

1200

70

3600~4200

14400

1.0×106

2.40

3000

125

0.016

0.005

28

0.650

T9C

KP1500-**

1500

70

3600~4200

18000

1.6×106

2.50

3000

125

0.015

0.0045

30

0.720

T10C

KP1900-**

1900

70

3600~4200

22800

2.6×106

2.30

3000

125

0.0125

0.004

33

0.850

T11C

KP2100-**

2100

65

3600~4200

24000

2.9×106

2.20

3000

125

0.011

0.003

35

1.500

T13D

KP3000-**

3000

70

3600~4200

36000

6.5×106

1.70

3000

125

0.008

0.002

60

1.990

T15D

KP3800-**

3800

70

3600~4200

45600

1.0×107

1.90

5000

125

0.006

0.0015

80

1.900

T16C


Product detail pictures:

Excellent quality Gate Turn-Off Thyristor For Hvdc - Phase Control Thyristor – Runau Electronics detail pictures

Excellent quality Gate Turn-Off Thyristor For Hvdc - Phase Control Thyristor – Runau Electronics detail pictures

Excellent quality Gate Turn-Off Thyristor For Hvdc - Phase Control Thyristor – Runau Electronics detail pictures


Related Product Guide:
Thyristor Definition

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