Fixed Competitive Price Semiconductor Device Phase Control Thyristor Scr-China - High Frequency Thyristor – Runau Electronics

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Fixed Competitive Price Semiconductor Device Phase Control Thyristor Scr-China - High Frequency Thyristor – Runau Electronics Detail:

High Frequency Thyristor

Description:

1. IGT, VGT and IH are the test values at 25, unless otherwise stated, all the other parameters are the test values under Tjm;

2.I2t=I2FSM×tw/2, tw= Sinusoidal half wave current base width. At 50Hz, I2t=0.005I2FSM(A2S);

3.At 60Hz: IFSM(8.3ms)=IFSM(10ms)×1.066,Tj=Tj;I2t(8.3ms)=I2t(10ms)×0.943,Tj=Tjm.

Parameter:

TYPE IT(AV)
A
TC
VDRRM/VRRM
V
ITSM
@TVJIM&10ms
A
I2t
A2s
VTM
@IT&TJ=25℃
V / A
tq
μs
Tjm
Rjc
℃/W
Rc-s
℃/W
F
KN
m
Kg
CODE
Voltage up to 1200V
KA200-** 200 55 800~1200 2800 3.9×104 3.20 640 15 125 0.060 0.010 10 0.08 T2A
KA500-** 500 55 800~1200 7500 2.8×105 3.20 1570 15 125 0.039 0.008 15 0.26 T5C
KA1000-** 1000 55 800~1200 15000 1.1×106 3.20 3000 15 125 0.022 0.005 25 0.46 T8C

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Fixed Competitive Price Semiconductor Device Phase Control Thyristor Scr-China - High Frequency Thyristor – Runau Electronics detail pictures

Fixed Competitive Price Semiconductor Device Phase Control Thyristor Scr-China - High Frequency Thyristor – Runau Electronics detail pictures

Fixed Competitive Price Semiconductor Device Phase Control Thyristor Scr-China - High Frequency Thyristor – Runau Electronics detail pictures


Related Product Guide:
Thyristor Definition

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