Phase Control Thyristor (Alloying Type)

Description:

Thyristor, also known as Silicon Control Rectifier (SCR), is a high-power semiconductor device consisting of three PN structures. In terms of performance, the thyristor not only has unidirectional conductivity, but also has more valuable controllability than the silicon rectifier element, which only two states of conduction and off-state, to control large power with small power, power amplification up to hundreds or thousands of times. The reaction is very fast, turning on and off in micro-seconds. Non-contact operation, no sparks, no noise, while high efficiency and low cost. Therefore, especially in high power supply system, thyristor has been widely used in rectifier circuit, static bypass switch, contact-free output switch and other circuits.

The thyristor manufacturing standard and processing technology of RUNAU Electronics was introduced from USA since 1980s, as a pioneer of manufacturing thyristor in China, the technical team of RUNAU had acquired the cutting-edge knowledge and ample manufacturing experience for more than 30 years. On basic of traditional manufacturing process, the talent technicians of RUNAU Electronics had developed the art-of-state technology in manufacturing thyristor with advantage features of European products, the quality and performance are improved greatly, more big wins achieved in the application of power electronics fields, and more value was created for partners.

Introduction:

1. Chip

The thyristor chip manufactured by RUNAU Electronics is sintered alloying technology employed. The silicon and molybdenum wafer was sintered for alloying by pure aluminum (99.999%) under high vacuum and high temperature environment. The administration of sintering characteristics is the key factor to affect the quality of thyristor. The know-how of RUNAU Electronics in addition to manage the alloy junction depth, surface flatness, alloy cavity as well full diffusion skill, center gate, ring circle pattern were applied to enable the reliable and high efficient conduction operation of thyristor, in order to ensure the high quality performance.

2. Encapsulation

By strict controlling of flatness and parallelism of molybdenum wafer and external package, the chip and molybdenum wafer will be integrated with external package tightly and completely. Such will optimize the resistance of surge current and high short circuit current. And the measurement of electron evaporation technology was employed to create a thick aluminum film on silicon wafer surface, and ruthenium layer plated on molybdenum surface will enhance thermal fatigue resistance greatly, the work life time of thyristor will be increased significantly.

Technical specification

1. Phase controlled thyristor with alloy type chip manufactured by RUNAU Electronics, range of I_TAV from 300A to 6000A and V_DRM/V_RRM from 800V to 4400V.
2. I_GT, V_GT and I_H are the test values at 25℃, unless otherwise stated, all the other parameters are the test values under T_jm;
3. I²t=I²F SM×tw/2, tw= Sinusoidal half wave current base width. At 50Hz, I²t=0.005I²FSM(A²S);
4. At 60Hz: I_FSM(8.3ms)=I_FSM(10ms)×1.066,T_j=T_j; I²t(8.3ms)=I²t(10ms)×0.943,T_j=T_jm

Parameter: