The normative references which applied by Jiangsu Yangjie Runau Semiconductor Co in the production of welding diode were at following:
1. GB/T 4023—1997 Discrete Devices Of Semiconductor Devices And Integrated Circuits Part 2: Rectifier Diodes
2. GB/T 4937—1995 Mechanical And Climatic Test Methods For Semiconductor Devices
3. JB/T 2423—1999 Power Semiconductor Devices – Modeling Method
4. JB/T 4277—1996 Power Semiconductor Device Packaging
5. JB/T 7624—1994 Rectifier Diode Test Method
Model And Size
1. Model name: The model of the welding diode refers to the regulations of JB/T 2423-1999, and the meaning of each part of the model is shown in Figure 1 at below:
2. Graphical symbols and terminal (sub) identification
Graphical symbols and terminal identification are shown in Figure 2, the arrow points to the cathode terminal.
3. Shape and installation dimensions
The shape of the welded diode is convex and disc type, and the shape with size should meet the requirements of Figure 3 and Table 1.
Item | Dimension (mm) | ||
ZW7100 | ZW12000 | ZW16000/ZW18000 | |
Cathode flange (Dmax) | 61 | 76 | 102 |
Cathode and anode Mesa(D1) | 44±0.2 | 57±0.2 | 68±0.2 |
Max diameter of ceramic ring(D2max) | 55.5 | 71.5 | 90 |
Total thickness (A) | 8±1 | 8±1 | 13±2 |
Mount position hole | Diameter of hole:φ3.5±0.2mm,Depth of hole: 1.5±0.3mm |
Ratings and characteristics
1. Parameter level
The series of reverse repetitive peak voltage (VRRM) is as specified in Table 2
Table 2 Voltage Level
VRRM(V) | 200 | 400 |
Level | 02 | 04 |
2. Limit values
Limit values shall comply with Table 3 and apply to the entire operating temperature range.
Table 3 Limit Value
Limit Value |
Symbol |
Unit |
Value |
|||
ZW7100 | ZW12000 | ZW16000 | ZW18000 | |||
Case temperature |
Tcase |
℃ |
-40~85 |
|||
Equivalent junction temperature (max) |
T(vj) |
℃ |
170 |
|||
Storage temperature |
Tstg |
℃ |
-40~170 |
|||
Repetitive peak reverse voltage (max) |
VRRM |
V |
200/400 |
200/400 |
200/400 |
200/400 |
Reverse non-repetitive peak voltage (max |
VRSM |
V |
300/450 |
300/450 |
300/450 |
300/450 |
Forward average current (max) |
IF(AV) |
A |
7100 |
12000 |
16000 |
18000 |
Forward (non-repetitive) surge current (max) |
IFSM |
A |
55000 |
85000 |
120000 |
135000 |
I²t (max) |
I²t |
kA²s |
15100 |
36100 |
72000 |
91000 |
Mounting force |
F |
kN |
22~24 |
30~35 |
45~50 |
52~57 |
3. Characteristic values
Table 4 Max characteristic values
Character and condition | Symbol | Unit |
Value |
|||
ZW7100 |
ZW12000 |
ZW16000 |
ZW18000 |
|||
Forward peak voltageIFM=5000A, Tj=25℃ | VFM | V |
1.1 |
1.08 |
1.06 |
1.05 |
Reverse repetitive peak currentTj=25℃, Tj=170℃ | IRRM | mA |
50 |
60 |
60 |
80 |
Thermal resistance Junction-to-case | Rjc | ℃/ W |
0.01 |
0.006 |
0.004 |
0.004 |
Note: for special requirement please consult |
The welding diode produced by Jiangsu Yangjie Runau Semiconductor is widely applied in resistance welder, medium and high frequency welding machine up to 2000Hz or above. With an ultra-low forward peak voltage, ultra-low thermal resistance, state of art manufacture technology, excellent substitution ability and stable performance for global users, the welding diode from Jiangsu Yangjie Runau Semiconductor is the one of the most reliable device of China power semiconductor products.
Post time: Jun-14-2023