1.IEC standards was used to characterize the thyristor, diode performance, features several ten parameters, but users often use a ten or so, this article briefly thyristor / diode of the main parameters.
2.Average Forward Current IF (AV) (rectifier) / Mean on-state current IT (AV) (Thyristor): is defined in terms of the heat sink temperature or case temperature TC THS when allowed to flow through the device’s maximum half sine wave current average. At this point, the junction temperature has reached its maximum allowable temperature Tjm. LMH Company Product Manual gives appropriate state current corresponding to the heat sink temperature THS or case temperature TC values, the user should be based on actual on-state current, and thermal conditions to select the appropriate model of the device.
3.Forward root mean square current IF (RMS) (rectifier) / On-state RMS Current IT (RMS) (Thyristor): is defined in terms of the heat sink temperature or case temperature TC THS when allowed to flow through the device’s maximum effective current value. In use, the user shall ensure that in any conditions, RMS current flowing through the device case temperature does not exceed the corresponding root mean square current value.
4.Surge current IFSM (rectifier), ITSM (SCR)
Represents work in exceptional circumstances, the device can withstand instantaneous maximum overload current values. 10ms half sine wave with a peak that LMH is given in the product manual inrush current value is the maximum allowable junction temperature of the device is under 80% VRRM applied under the conditions of the test values. In the lifetime of the device can withstand the inrush current is limited by the number of users in use should try to avoid overload.
5.Non repetitive peak off-state voltage VDSM / Non repetitive peak reverse voltage VRSM: refers thyristor or rectifier diode is blocking state can withstand the maximum breakover voltage, usually with a single pulse testing to prevent damage to the device. User in testing or application, shall be prohibited to the voltage applied to the device, to avoid damage to the device.
6.Repetitive peak off-state voltage VDRM / Repetitive peak reverse voltage VRRM: means the device is in blocking state, the off-state and reverse can withstand the maximum repetitive peak voltage. Generally the device does not repeat the voltage 90% mark (non-repetitive voltage high voltage devices take less marked 100V). Users in use shall ensure that in any case, should not allow the device to withstand the actual voltage exceeds its off-state and Repetitive peak reverse voltage.
7.Repetitive peak off-state (leakage) current IDRM / Repetitive peak reverse (leakage) current IRRM
Thyristor in blocking state, to withstand repetitive peak off-state voltage VDRM and VRRM Repetitive peak reverse voltage, the forward and reverse flow through the component peak drain current. This parameter allows the device to work under the maximum junction temperature Tjm measured.
8.Peak on-state voltage VTM (SCR) / Peak forward voltage VFM (rectifier)
Refers to the device by a predetermined forward peak current IFM (rectifier) ​​or the peak current state ITM (SCR) is the peak voltage, also known as the peak voltage drop. This parameter directly reflects the characteristics of the device on-state losses, affecting the device’s on-state current rated capacity.
Device at different current values ​​under the on-state (forward) peak voltage can be approximated with a threshold voltage and slope resistor, said:
VTM = VTO + rT * ITM VFM = VFO + rF * IFM
Run Austrian company in the product manual for each model are given in the device’s maximum on-state (forward) peak voltage and the threshold voltage and slope resistance, the user needs, you can provide the device threshold voltage and the slope of the measured resistance value.
9.Circuit commutated turn-off time tq (SCR)
Under specified conditions, the main current of the thyristor forward drop over zero, from zero crossing to be able to withstand the heavy element voltage is applied instead to turn the minimum time interval. Thyristor turn-off time value is determined for the test conditions, Run Austrian company manufactured fast, high-frequency thyristor devices offer a turn-off time of each measured value, is not particularly described, the corresponding conditions are as follows:
ITM-state peak current is equal to the device ITAV;
On-state current decrease rate di / dt = -20A/μs;
Heavier voltage rise rate dv / dt = 30A/μs;
Reverse voltage VR = 50V;
Junction temperature Tj = 125 ° C.
If you need a specific application conditions in off-time test values, you can request to us.
10.Critical rate of rise of on-state current di / dt (SCR)
Refers to the thyristor from blocking state to the on state, the thyristor can withstand the maximum rate of rise of on-state current. The device can withstand on-state current Critical rate of rise di / dt gate trigger condition by a great impact, so we strongly recommend that users use the application trigger, the trigger pulse current amplitude: IG ≥ 10IGT; pulse rise time: tr ≤ 1μs.
10. Critical rate of rise of off-state voltage dv / dt
Under specified conditions, will not cause the thyristor from the off state to the on state converting the maximum allowable forward voltage rise speed. Run Austrian company product manual gives the smallest of all varieties thyristor dv / dt value, when the user dv / dt have special requirements, can be made when ordering.
11.Gate trigger voltage VGT / Gate trigger current IGT
Under specified conditions, to make the thyristor turn-off state by the required minimum gate voltage and gate current. Thyristor opened during opening hours, opening loss and other dynamic performance by applying in its gate trigger signal strength on a great impact. If in the application of a more critical IGT to trigger thyristor, thyristor will not let get a good opening characteristics, in some cases even cause premature failure or damage to the device. Therefore recommended that the user application using a strong trigger mode, the trigger pulse current amplitude: IG ≥ 10IGT; pulse rise time: tr ≤ 1μs. To ensure reliable operation of the device, IG must be much larger than IGT.
12.Crusts resistance Rjc
Refers to the device under specified conditions, the device is flowing from the junction to case temperature rise generated per watt. Crusts resistance reflects the heat capacity of the device, this parameter has a direct impact on device-state rated performance. Run Austrian company product manual for flat sided cooling device shows the steady-state thermal resistance of the semiconductor power modules, gives the single-sided cooling the thermal resistance. Users should note that the flat part of the crust thermal effects directly affected by the installation conditions, only according to the manual for the recommended mounting force installation in order to ensure the thermal resistance of the device to meet the requirements crusts.