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Quality Inspection for Intermediate Medium Frequency Melting - High Frequency Thyristor – Runau Electronics Detail:
High Frequency Thyristor
Description:
1. IGT, VGT and IH are the test values at 25℃, unless otherwise stated, all the other parameters are the test values under Tjm;
2.I2t=I2FSM×tw/2, tw= Sinusoidal half wave current base width. At 50Hz, I2t=0.005I2FSM(A2S);
3.At 60Hz: IFSM(8.3ms)=IFSM(10ms)×1.066,Tj=Tj;I2t(8.3ms)=I2t(10ms)×0.943,Tj=Tjm.
Parameter:
TYPE |
IT(AV)
A |
TC
℃ |
VDRRM/VRRM
V |
ITSM
@TVJIM&10ms
A |
I2t
A2s |
VTM
@IT&TJ=25℃
V / A |
tq
μs |
Tjm
℃ |
Rjc
℃/W |
Rc-s
℃/W |
F
KN |
m
Kg |
CODE |
Voltage up to 1200V |
KA200-** |
200 |
55 |
800~1200 |
2800 |
3.9×104 |
3.20 |
640 |
15 |
125 |
0.060 |
0.010 |
10 |
0.08 |
T2A |
KA500-** |
500 |
55 |
800~1200 |
7500 |
2.8×105 |
3.20 |
1570 |
15 |
125 |
0.039 |
0.008 |
15 |
0.26 |
T5C |
KA1000-** |
1000 |
55 |
800~1200 |
15000 |
1.1×106 |
3.20 |
3000 |
15 |
125 |
0.022 |
0.005 |
25 |
0.46 |
T8C |
Product detail pictures:
Related Product Guide:
Thyristor Definition
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