Features:
• Enlarged gate structure
• Same silicon wafer contains two thyristors
• Blocking capability up to 6500 volts
• High power capability
• Full cold pressing encapsulation
Applications:
• Non-contact AC switch
• Regulation and control of AC power
Parameter:
TYPE |
IT(AV) |
TC |
VDRRM/VRRM |
ITSM@TVJIM &10ms |
I2t |
VTM @IT&TJ=25℃ |
Tjm |
Rjc |
Rc-s |
F |
m |
CODE |
|
A |
℃ |
V |
A |
A2s |
V |
A |
℃ |
℃/W |
℃/W |
KN |
Kg |
||
Voltage Up to 1600V |
|||||||||||||
BCT300-** |
300 |
65 |
500~1600 |
2500 |
2.7×104 |
1.65 |
500 |
125 |
0.065 |
15 |
0.08 |
T2A |
|
BCT500-** |
500 |
65 |
500~1600 |
4200 |
4.5×104 |
1.65 |
700 |
125 |
0.040 |
0.015 |
15 |
2TA |
|
BCT1000-** |
1000 |
65 |
500~1600 |
8400 |
9×104 |
1.65 |
1000 |
125 |
0.025 |
0.015 |
18 |
0.260 |
T5C |
Voltage Up to 4500V |
|||||||||||||
KS250-** |
250 |
70 |
4000~4500 |
3000 |
45×103 |
2.30 |
500 |
25 |
0.080 |
0.015 |
14 |
0.40 |
TS5D |
KS460-** |
460 |
70 |
4000~4500 |
5520 |
1.5×105 |
2.20 |
1000 |
25 |
0.045 |
0.008 |
22 |
0.60 |
TS8D |
Voltage Up to 6500V |
|||||||||||||
KS175-** |
175 |
70 |
5800~6500 |
1925 |
19×103 |
2.90 |
300 |
25 |
0.080 |
0.015 |
14 |
0.40 |
TS5D |
KS350-** |
350 |
70 |
5800~6500 |
4200 |
88×103 |
3.50 |
1000 |
25 |
0.045 |
0.008 |
22 |
0.60 |
TS8D |