Press-pack IGBT (IEGT)

 Note: D - with diode part, A - without diode part 

Conventionally, the solder contact IGBT modules were applied in the switch gear of flexible DC transmission system. The module package is single side heat dissipation. The power capacity of device is limited and not proper to be connected in series, poor lifetime in salt air, poor vibration anti-shock or thermal fatigue.

The new type press-contact high-power press-pack IGBT device not only completely solves the problems of vacancy in soldering process, thermal fatigue of soldering material and low efficiency of single-sided heat dissipation but also eliminates the thermal resistance between various components, minimize the size and weight. And significantly improve the working efficiency and reliability of IGBT device. It’s pretty suitable to satisfy the high-power, high-voltage, high-reliability requirements of the flexible DC transmission system.

The substitution of solder contact type by press-pack IGBT is imperative.

Since 2010, Runau Electronics was elaborated to develop new type press-pack IGBT device and succeed the production in 2013. The performance was certified by national qualification and the cut-edge achievement was completed.

Now we can manufacture and provide series press-pack IGBT of IC range in 600A to 3000A and VCES range in 1700V to 6500V. A splendid prospect of press-pack IGBT made in China to be applied in China flexible DC transmission system is highly expected and it will become another world class mile stone of China power electronics industry after high-speed electric train.

Brief Introduction of Typical Mode:

1. Mode: Press-pack IGBT　CSG07E1700

● Electrical characteristics after packaging and pressing
● Reverse parallel connected fast recovery diode concluded

● Parameter：

Rated value（25℃）

a. Collector Emitter Voltage: VGES=1700（V）

b. Gate Emitter Voltage: VCES=±20（V）

c. Collector Current: IC=800（A）ICP=1600（A）

d. Collector Power Dissipation: PC=4440（W）

e. Working Junction Temperature: Tj=－20~125℃

f. Storage Temperature: Tstg=－40~125℃ 

Noted: device will be damaged if beyond rated value

Electrical Characteristics, TC＝125℃，Rth (thermal resistance of junction to case）not included

a. Gate Leakage Current: IGES=±5（μA）

b. Collector Emitter Blocking Current ICES=250（mA）

c. Collector Emitter Saturation Voltage: VCE(sat)=6(V)

d. Gate Emitter Threshold Voltage: VGE(th)=10(V)

e. Turn on time: Ton=2.5μs

f. Turn off time: Toff=3μs

2. Mode: Press-pack IGBT　CSG10F2500

● Electrical characteristics after packaging and pressing
● Reverse parallel connected fast recovery diode concluded

● Parameter：

Rated value（25℃）

a. Collector Emitter Voltage: VGES=2500（V）

b. Gate Emitter Voltage: VCES=±20（V）

c. Collector Current: IC=600（A）ICP=2000（A）

d. Collector Power Dissipation: PC=4800（W）

e. Working Junction Temperature: Tj=－40~125℃

f. Storage Temperature: Tstg=－40~125℃ 

Noted: device will be damaged if beyond rated value

Electrical Characteristics, TC＝125℃，Rth (thermal resistance of junction to case）not included

a. Gate Leakage Current: IGES=±15（μA）

b. Collector Emitter Blocking Current ICES=25（mA）

c. Collector Emitter Saturation Voltage: VCE(sat)=3.2 (V)

d. Gate Emitter Threshold Voltage: VGE(th)=6.3(V)

e. Turn on time: Ton=3.2μs

f. Turn off time: Toff=9.8μs

g. Diode Forward voltage: VF=3.2 V

h. Diode Reverse Recovery Time: Trr=1.0 μs

3. Mode: Press-pack IGBT　CSG10F4500

● Electrical characteristics after packaging and pressing
● Reverse parallel connected fast recovery diode concluded

● Parameter：

Rated value（25℃）

a. Collector Emitter Voltage: VGES=4500（V）

b. Gate Emitter Voltage: VCES=±20（V）

c. Collector Current: IC=600（A）ICP=2000（A）

d. Collector Power Dissipation: PC=7700（W）

e. Working Junction Temperature: Tj=－40~125℃

f. Storage Temperature: Tstg=－40~125℃ 

Noted: device will be damaged if beyond rated value

Electrical Characteristics, TC＝125℃，Rth (thermal resistance of junction to case）not included

a. Gate Leakage Current: IGES=±15（μA）

b. Collector Emitter Blocking Current ICES=50（mA）

c. Collector Emitter Saturation Voltage: VCE(sat)=3.9 (V)

d. Gate Emitter Threshold Voltage: VGE(th)=5.2 (V)

e. Turn on time: Ton=5.5μs

f. Turn off time: Toff=5.5μs

g. Diode Forward voltage: VF=3.8 V

h. Diode Reverse Recovery Time: Trr=2.0 μs

Note: Press-pack IGBT is advantage in long-term high mechanical reliability, high resistance to damage and the characteristics of the press connect structure, is convenient to be employed in series device, and compared with the traditional GTO thyristor, IGBT is voltage-drive method. Therefore, it is easy to operate, safe and wide operating range.